Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102813
Title: Nonvolatile CBRAM-crossbar-based 3-D-integrated hybrid memory for data retention
Authors: Wang, Yuhao
Yu, Hao
Zhang, Wei
Keywords: DRNTU::Engineering::Computer science and engineering::Data
Issue Date: 2013
Source: Wang, Y., Yu, H., & Zhang, W. (2014). Nonvolatile CBRAM-Crossbar-Based 3-D-Integrated Hybrid Memory for Data Retention. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 22(5), 957-970.
Series/Report no.: IEEE transactions on Very Large Scale Integration (VLSI) Systems
Abstract: This paper explores the design of 3-D-integrated hybrid memory by conductive-bridge random-access-memory (CBRAM). Considering internal states, height, and radius of the conductive bridge of one CBRAM device, an accurate CBRAM device model is developed for CBRAM-crossbar-based nonvolatile memory design with efficient estimation of area, access time, and power. Based on this design platform, one 3-D-integrated hybrid memory is designed by stacking one tier of CBRAM-crossbar with tiers of static random access memory (SRAM) and dynamic random access memory (DRAM), where the tier of CBRAM-crossbar is deployed for data retention during power gating of SRAM/DRAM tiers. One corresponding block-level data retention is developed to only write back dirty data from SRAM/DRAM to CBRAM-crossbar. When compared with phase-change random-access-memory-based system-level data retention, our design achieves 11× faster data-migration speed and 10× less data-migration power. When compared with ferroelectric random-access-memory-based bit-level data retention, our design also achieves 17× smaller area and 56× smaller power under the same data-migration speed.
URI: https://hdl.handle.net/10356/102813
http://hdl.handle.net/10220/19987
ISSN: 1063-8210
DOI: 10.1109/TVLSI.2013.2265754
Rights: © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [DOI: http://dx.doi.org/10.1109/TVLSI.2013.2265754].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SCSE Journal Articles

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