Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102823
Title: Synthesis, characterization, and non-volatile memory device application of an N-substituted heteroacene
Authors: Wang, Chengyuan
Wang, Jiangxin
Li, Pei-Zhou
Gao, Junkuo
Tan, Si Yu
Xiong, Wei-Wei
Hu, Benlin
Lee, Pooi See
Zhao, Yanli
Zhang, Qichun
Keywords: DRNTU::Engineering::Materials
Issue Date: 2014
Source: Wang, C., Wang, J., Li, P.-Z., Gao, J., Tan, S. Y., Xiong, W.-W., et al. (2014). Synthesis, Characterization, and Non-Volatile Memory Device Application of an N-Substituted Heteroacene. Chemistry - An Asian Journal, 9(3), 779-783.
Series/Report no.: Chemistry - an Asian journal
Abstract: N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4′-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4,5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.
URI: https://hdl.handle.net/10356/102823
http://hdl.handle.net/10220/19135
ISSN: 1861-4728
DOI: 10.1002/asia.201301547
Rights: © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles
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