Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102911
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dc.contributor.authorXu, Honghaoen
dc.contributor.authorZhang, Huaijinen
dc.contributor.authorYu, Haohaien
dc.contributor.authorTang, Dingyuanen
dc.contributor.authorXu, Changwenen
dc.date.accessioned2014-04-02T01:17:34Zen
dc.date.accessioned2019-12-06T21:02:10Z-
dc.date.available2014-04-02T01:17:34Zen
dc.date.available2019-12-06T21:02:10Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationXu, H., Zhang, H., Yu, H., Tang, D., & Xu, C. (2014). Passive mode-locking performance of mixed Nd:La0.11Y0.89VO4 crystal. Optics Express, 22(5), 5350-5356.en
dc.identifier.issn1094-4087en
dc.identifier.urihttps://hdl.handle.net/10356/102911-
dc.description.abstractPassive mode locking of a diode pumped Nd:La0.11Y0.89VO4 mixed crystal laser with a semiconductor saturable absorber mirror (SESAM) was experimentally investigated for the first time to our knowledge. Stable CW mode-locking has been achieved on both a-cut and c-cut mixed crystals. In case of the a-cut crystal, when a 2% output coupler (OC) was used, the shortest pulse obtained was 4.5 ps and the highest output power was 0.94 W, while when a 6% OC was used, the shortest pulse obtained was 6.8 ps and the highest output power was 5.16 W. In the latter case the optical conversion efficiency is 38% and the slope efficiency is 40.3%, respectively; with the c-cut crystal the shortest pulse achieved was 5.5 ps. Moreover, simultaneous mode locking at two close wavelengths of 1064.3 nm and 1066.2 nm was observed on the c-cut crystal. The mode locked pulse beating generated temporal interference fringe of 0.5 THz repetition rate.en
dc.language.isoenen
dc.relation.ispartofseriesOptics expressen
dc.rights© 2013 Optical Society of America. This paper was published in Optics Express and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OE.22.005350].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titlePassive mode-locking performance of mixed Nd:La0.11Y0.89VO4 crystalen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1364/OE.22.005350en
dc.description.versionPublished versionen
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