Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/102941
Title: | Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes | Authors: | Yang, Xuyong Mutlugun, Evren Zhao, Yongbiao Gao, Yuan Leck, Kheng Swee Ma, Yanyan Ke, Lin Tan, Swee Tiam Demir, Hilmi Volkan Sun, Xiao Wei |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics | Issue Date: | 2013 | Source: | Yang, X., Mutlugun, E., Zhao, Y., Gao, Y., Leck, K. S., Ma, Y., et al. (2014). Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes. Small, 10(2), 247-252. | Series/Report no.: | Small | Abstract: | A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays. | URI: | https://hdl.handle.net/10356/102941 http://hdl.handle.net/10220/19202 |
ISSN: | 1613-6810 | DOI: | 10.1002/smll.201301199 | Schools: | School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences |
Rights: | © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles SPMS Journal Articles |
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