Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102941
Title: Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes
Authors: Yang, Xuyong
Mutlugun, Evren
Zhao, Yongbiao
Gao, Yuan
Leck, Kheng Swee
Ma, Yanyan
Ke, Lin
Tan, Swee Tiam
Demir, Hilmi Volkan
Sun, Xiao Wei
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2013
Source: Yang, X., Mutlugun, E., Zhao, Y., Gao, Y., Leck, K. S., Ma, Y., et al. (2014). Solution processed tungsten oxide interfacial layer for efficient hole-injection in quantum dot light-emitting diodes. Small, 10(2), 247-252.
Series/Report no.: Small
Abstract: A highly efficient and stable QLED using an inorganic WO3 nanoparticle film as a hole injection layer is demonstrated.The resulting WO3 nanoparticle-based QLEDs also exhibit superior performance compared to that of the present PEDOT:PSS-based QLEDs. The results indicate that WO3 nanoparticles are promising solution-processed buffer layer materials and serve as a strong candidate for QLED technology towards the practical applications in the next-generation lighting and displays.
URI: https://hdl.handle.net/10356/102941
http://hdl.handle.net/10220/19202
ISSN: 1613-6810
DOI: 10.1002/smll.201301199
Rights: © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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