Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103100
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dc.contributor.authorPumera, Martinen
dc.date.accessioned2014-12-09T08:11:56Zen
dc.date.accessioned2019-12-06T21:05:35Z-
dc.date.available2014-12-09T08:11:56Zen
dc.date.available2019-12-06T21:05:35Z-
dc.date.copyright2014en
dc.date.issued2014en
dc.identifier.citationPumera, M. (2014). Heteroatom modified graphenes : electronic and electrochemical applications. Journal of materials chemistry c, 2(32), 6454-6461.en
dc.identifier.urihttps://hdl.handle.net/10356/103100-
dc.description.abstractGraphene exhibits zero band gap, very small electrical resistivity, fast heat dissipation, and fast heterogeneous electron transfer properties. These features, coupled with affordable preparation cost and high surface area, predetermine graphene materials for application in electronic and electrochemical devices. Doping graphene with electron-withdrawing or -donating heteroatoms leads to tailoring of graphene electronic and electrochemical properties. Here, we discuss doping of graphene-based materials with main group heteroatoms (s and p blocks). We will also discuss the application of such doped graphenes in electronic, sensing, and energy storage/generation devices.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of materials chemistry cen
dc.rightsThis article is licensed under a Creative Commons Attribution 3.0 Unported Licence.en
dc.subjectDRNTU::Engineering::Materialsen
dc.titleHeteroatom modified graphenes : electronic and electrochemical applicationsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1039/C4TC00336Een
dc.description.versionPublished versionen
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