Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103135
Title: Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing
Authors: Cao, Qi
Tong, Cunzhu
Yoon, Soon Fatt
Liu, Chongyang
Ngo, Chun Yong
Keywords: DRNTU::Science::Chemistry::Physical chemistry::Quantum chemistry
Issue Date: 2012
Source: Cao, Q., Tong, C., Yoon, S. F., Liu, C., & Ngo, C. Y. (2012). Improved performance of 1.3-μm multilayer P-doped InAs/InGaAs quantum dot lasers using rapid thermal annealing. IEEE transactions on nanotechnology, 11(2), 231-235.
Series/Report no.: IEEE transactions on nanotechnology
Abstract: Significant improvements in the performance of p-doped ten-layer InAs/InGaAs quantum dot laser are demonstrated using rapid thermal annealing at 600 °C. The annealed laser shows about 2.7 times increase in the saturated output power and external differential quantum efficiency without obvious wavelength shift. Decrease in internal loss of 2.9 cm-1 and improvement in the threshold current by 23% are achieved. Defect reduction is thought to be the most likely mechanism contributing to the improved performance according to the electroluminescence and improved characteristic temperature behavior.
URI: https://hdl.handle.net/10356/103135
http://hdl.handle.net/10220/16468
DOI: 10.1109/TNANO.2010.2068558
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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