Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103151
Title: Epitaxial growth of successive CdSe ultrathin films and quantum dot layers on TiO2 nanorod arrays for photo-electrochemical cells
Authors: Feng, Shuanglong
Wu, Jin
Hu, Peng
Chen, Ying
Ma, Bing
Peng, Jiangying
Yang, Junyou
Jiang, Hui
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2014
Source: Feng, S., Wu, J., Hu, P., Chen, Y., Ma, B., Peng, J., et al. (2014). Epitaxial growth of successive CdSe ultrathin films and quantum dot layers on TiO2 nanorod arrays for photo-electrochemical cells. RSC advances, 4(24), 12154-12159.
Series/Report no.: RSC advances
Abstract: In this work, successive cadmium selenide (CdSe) ultrathin films and quantum dot layers were successfully deposited on TiO2 nanorod arrays by the electrochemical atomic layer epitaxy method (ECALE). The underpotential deposition (UPD) processes of the successive CdSe films and quantum dot layers were recorded in detail. The photo-electrochemical properties of the CdSe coated TiO2 nanorod array electrodes were also investigated, and the maximum current density reached 14.6 mA cm−2 under one sun (AM 1.5G, 100 mW cm−2). Using the ECALE method to grow a buffer layer between quantum dots and their supporting material will be useful for other energy-providing materials.
URI: https://hdl.handle.net/10356/103151
http://hdl.handle.net/10220/24424
ISSN: 2046-2069
DOI: 10.1039/c3ra47404f
Rights: © 2014 The Royal Society of Chemistry.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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