Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103316
Title: Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate
Authors: Lin, Jia Dan
Han, Cheng
Wang, Fei
Wang, Rui
Xiang, Du
Qin, Shiqiao
Zhang, Xue-Ao
Wang, Li
Zhang, Hua
Wee, Andrew Thye Shen
Chen, Wei
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
Issue Date: 2014
Source: Lin, J. D., Han, C., Wang, F., Wang, R., Xiang, D., Qin, S., et al. (2014). Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate. ACS Nano, 8(5), 5323-5329.
Series/Report no.: ACS Nano
Abstract: We report effective and stable electron doping of monolayer molybdenum disulfide (MoS2) by cesium carbonate (Cs2CO3) surface functionalization. The electron charge carrier concentration in exfoliated monolayer MoS2 can be increased by about 9 times after Cs2CO3 functionalization. The n-type doping effect was evaluated by in situ transport measurements of MoS2 field-effect transistors (FETs) and further corroborated by in situ ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering measurements. The electron doping enhances the formation of negative trions (i.e., a quasiparticle comprising two electrons and one hole) in monolayer MoS2 under light irradiation and significantly reduces the charge recombination of photoexcited electron–hole pairs. This results in large photoluminescence suppression and an obvious photocurrent enhancement in monolayer MoS2 FETs.
URI: https://hdl.handle.net/10356/103316
http://hdl.handle.net/10220/24468
ISSN: 1936-0851
DOI: 10.1021/nn501580c
Rights: © 2014 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

SCOPUSTM   
Citations

134
checked on Jun 18, 2020

WEB OF SCIENCETM
Citations

138
checked on Oct 17, 2020

Page view(s)

287
checked on Oct 20, 2020

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.