Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103352
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dc.contributor.authorShukla, Sudhanshuen
dc.contributor.authorYang, Zhien
dc.contributor.authorWang, Minqiangen
dc.contributor.authorZhu, Yueen
dc.contributor.authorDeng, Jianpingen
dc.contributor.authorGe, Huen
dc.contributor.authorWang, Xingzhien
dc.contributor.authorXiong, Qihuaen
dc.date.accessioned2015-09-25T06:01:24Zen
dc.date.accessioned2019-12-06T21:10:41Z-
dc.date.available2015-09-25T06:01:24Zen
dc.date.available2019-12-06T21:10:41Z-
dc.date.copyright2015en
dc.date.issued2015en
dc.identifier.citationYang, Z., Wang, M., Shukla, S., Zhu, Y., Deng, J., Ge, H., et al. (2015). Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS2/CuI P-I-N Photodiode Application. Scientific Reports, 5, 11377-.en
dc.identifier.issn2045-2322en
dc.identifier.urihttps://hdl.handle.net/10356/103352-
dc.description.abstractA seedless hydrothermal method is developed to grow high density and vertically aligned ZnO micro/nanowire arrays with low defect density on metal films under the saturated nutrition solution. In particular, the mechanism of seedless method is discussed here. A buffer layer can be confirmed by transmission electron microscopy (TEM), which may release the elastic strain between ZnO and substrate to achieve this highly mismatched heteroepitaxial structures. Based on ZnO micro/nanowire arrays with excellent wettability surface, we prepared ZnO-FeS2-CuI p-i-n photodiode by all-solution processed method with the high rectifying ratio of 197 at ±1 V. Under AM 1.5 condition, the Jsc of 0.5 mA/cm2, on-off current ratio of 371 and fast photoresponse at zero bias voltage were obtained. This good performance comes from excellent collection ability of photogenerated electrons and holes due to the increased depletion layer width for p-i-n structure. Finally, the high responsivity around 900 nm shows the potential as near infrared photodetectors applications.en
dc.language.isoenen
dc.relation.ispartofseriesScientific Reportsen
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titleDeveloping seedless growth of ZnO micro/nanowire arrays towards ZnO/FeS2/CuI P-I-N photodiode applicationen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1038/srep11377en
dc.description.versionPublished versionen
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