Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103431
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dc.contributor.authorLin, Pamelaen
dc.contributor.authorBabicheva, Rita I.en
dc.contributor.authorXue, Mingen
dc.contributor.authorZhang, Hai Shuen
dc.contributor.authorXu, Huanen
dc.contributor.authorLiu, Boen
dc.contributor.authorZhou, Kunen
dc.date.accessioned2015-06-08T07:12:23Zen
dc.date.accessioned2019-12-06T21:12:34Z-
dc.date.available2015-06-08T07:12:23Zen
dc.date.available2019-12-06T21:12:34Z-
dc.date.copyright2015en
dc.date.issued2015en
dc.identifier.citationLin, P., Babicheva, R. I., Xue, M., Zhang, H. S., Xu, H., Liu, B., et al. (2015). Effects of temperature and voids on the interfacial fracture of Si/a-Si3N4 bilayer systems. Physica status solidi (b), 252(9), 2013-2019.en
dc.identifier.issn0370-1972en
dc.identifier.urihttps://hdl.handle.net/10356/103431-
dc.identifier.urihttp://hdl.handle.net/10220/25836en
dc.description.abstractThis work studies the effects of temperature, voids at or near the interface on the interfacial fracture behavior, and mechanisms of the Si/a-Si3N4 bilayer systems via molecular dynamics simulations. Under mode I loading, at 300 K, the interfacial strength of the bilayer system without voids is ∼22.5 GPa and it undergoes brittle fracture at the interface. However, at 600 K, failure occurs in the a-Si3N4 layer in a ductile mode. With the existence of void in the Si layer, crack initiates at the void and propagates toward the interface when the temperature is 300 K. However, as temperature increases to 600 K, the defected bilayer system undergoes brittle fracture at the interface at a significantly lowered interfacial strength. With the presence of void at the interface, the bilayer system fractures at the interface with a deteriorated strength regardless of temperature. Under mode II loading, the Si/a-Si3N4 system undergoes three deformation processes: elastic deformation, followed by plastic deformation in the a-Si3N4 layer, and subsequently, interfacial sliding. The presence of voids at different locations and the increase in temperature lower the stresses required for interfacial sliding but do not have significant effect on the shear deformation processes. This study provides an insight to fracture behavior of Si/a-Si3N4 system at certain operating conditions.en
dc.language.isoenen
dc.relation.ispartofseriesPhysica status solidi (b)en
dc.rights© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.subjectDRNTU::Science::Chemistry::Physical chemistry::Molecular structure and bondingen
dc.titleEffects of temperature and voids on the interfacial fracture of Si/a-Si3 N4 bilayer systemsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen
dc.identifier.doihttp://dx.doi.org/10.1002/pssb.201552087en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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