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Title: Robust electromigration reliability through engineering optimization
Authors: Tee, Kheng Chok
Ee, Yong Chiang
Aubel, Oliver
Pey, Kin Leong
Ng, Wee Loon
Liu, Junfeng
Tan, Chuan Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Issue Date: 2014
Source: Ng, W. L., Tee, K. C., Liu, J., Ee, Y. C., Aubel, O., Tan, C. S., et al. (2014). Robust electromigration reliability through engineering optimization. Microelectronics reliability, 54(9-10), 1666-1670.
Series/Report no.: Microelectronics reliability
Abstract: With complex process integration approach and severe fabrication limitations caused by introduction of new materials and diminishing process margins, there are mounting concerns with the increased failure rate at the early life cycle (e.g.<1 year operation) of product application known as infant mortality failures. A paradigm change in reliability qualification methodology aim at understanding the impact of variation on reliability is required to ensure reliability robustness. Using Electromigration (EM) as an example, this paper described a methodology where the impact of process variation on reliability is studied. A model that predicts the impact of process variation on EM sigma is also proposed which enables variation and its impact on reliability to be quantified. Using this methodology, the critical process parameters impacting reliability could be identified and controlled to ensure reliability robustness.
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2014.07.096
Schools: School of Electrical and Electronic Engineering 
Rights: © 2014 Elsevier Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Microelectronics Reliability, Elsevier Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [Article DOI:].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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