Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103474
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dc.contributor.authorTan, Chuan Sengen
dc.contributor.authorLu, W.en
dc.contributor.authorPey, K. L.en
dc.contributor.authorSingh, N.en
dc.contributor.authorLeong, K. C.en
dc.contributor.authorLiu, Q.en
dc.contributor.authorGan, C. L.en
dc.contributor.authorLo, G. Q.en
dc.contributor.authorKwong, D. -L.en
dc.date.accessioned2014-04-10T08:16:29Zen
dc.date.accessioned2019-12-06T21:13:28Z-
dc.date.available2014-04-10T08:16:29Zen
dc.date.available2019-12-06T21:13:28Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationLu, W., Pey, K. L., Singh, N., Leong, K. C., Liu, Q., Gan, C. L., et al. (2012). Effect of Nickel Silicide Induced Dopant Segregation on Vertical Silicon Nanowire Diode Performance. MRS Proceedings, 1439, 89-94.en
dc.identifier.issn1946-4274en
dc.identifier.urihttps://hdl.handle.net/10356/103474-
dc.identifier.urihttp://hdl.handle.net/10220/19235en
dc.description.abstractIn this work, Dopant Segregated Schottky Barrier (DSSB) and Schottky Barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated on p-type Si substrate using CMOS-compatible processes to investigate the effects of segregated dopants at the silicide/silicon interface and different annealing processes on nickel silicide formation in DSSB VSiNW diodes. With segregated dopants at the silicide/silicon interface, VSiNW diodes showed higher on-current, due to an enhanced carrier tunneling, and much lower leakage current. This can be attributed to the altered energy bands caused by the accumulated Arsenic dopants at the interface. Moreover, DSSB VSiNW diodes also gave ideality factor much closer to unity and exhibited lower electron SBH (ΦBn) than SB VSiNW diodes. This proved that interfacial accumulated dopants could impede the inhomogeneous nature of the Schottky diodes and simultaneously, minimize the effect of Fermi level pinning and ionization of surface defect states. Comparing the impact of different silicide formation annealing using DSSB VSiNW diodes, the 2-step anneal process reduces the silicide intrusion length within the SiNW by ~ 5X and the silicide interface was smooth along the (100) direction. Furthermore, the 2-step DSSB VSiNW diode also exhibited much lower leakage current and an ideality factor much closer to unity, as compared to 1-step DSSB VSiNW diode.en
dc.language.isoenen
dc.relation.ispartofseriesMRS proceedingsen
dc.rights© 2012 Materials Research Society. This paper was published in MRS Proceedings and is made available as an electronic reprint (preprint) with permission of Materials Research Society. The paper can be found at the following official DOI: http://dx.doi.org/10.1557/opl.2012.845.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleEffect of nickel silicide induced dopant segregation on vertical silicon nanowire diode performanceen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.identifier.doi10.1557/opl.2012.845en
dc.description.versionPublished versionen
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