Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103506
Title: Simulated optical absorption enhancement in random silicon nanohole structure for solar cell application
Authors: Hong, Lei
Rusli
Wang, Xincai
Zheng, Hongyu
Wang, Hao
Yu, Hongyu
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2014
Source: Hong, L., Rusli, Wang, X., Zheng, H., Wang, H., & Yu, H. (2014). Simulated optical absorption enhancement in random silicon nanohole structure for solar cell application. Journal of applied physics, 116(19), 194302-.
Series/Report no.: Journal of applied physics
Abstract: We have conducted a systematic simulation study on light absorption in a silicon nanohole structure that has randomness introduced into its structural parameters, which include the hole radius, depth, and position. It is found that light absorption is enhanced for the random structures compared to their periodic counterparts. This is attributed to additional resonances induced by the structural disorders, broadening of the existing resonance, and lower optical reflection. The highest light absorption is obtained for the structure with randomness in hole position, which achieves a 12.7% enhancement compared with the periodic structure.
URI: https://hdl.handle.net/10356/103506
http://hdl.handle.net/10220/24533
DOI: 10.1063/1.4901466
Rights: © 2014 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4901466].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SIMTech Journal Articles

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.