Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103554
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dc.contributor.authorWeber, Benten
dc.contributor.authorHsueh, Yu-Lingen
dc.contributor.authorWatson, Thomas F.en
dc.contributor.authorLi, Ruoyuen
dc.contributor.authorHamilton, Alexander R.en
dc.contributor.authorHollenberg, Lloyd C. L.en
dc.contributor.authorRajib Rahmanen
dc.contributor.authorSimmons, Michelle Y.en
dc.date.accessioned2019-01-03T08:56:22Zen
dc.date.accessioned2019-12-06T21:15:13Z-
dc.date.available2019-01-03T08:56:22Zen
dc.date.available2019-12-06T21:15:13Z-
dc.date.issued2018en
dc.identifier.citationWeber, B., Hsueh, Y.-L., Watson, T. F., Li, R., Hamilton, A. R., Hollenberg, L. C. L., ... Simmons, M. Y. (2018). Spin–orbit coupling in silicon for electrons bound to donors. npj Quantum Information, 4(1), 61-. doi:10.1038/s41534-018-0111-1en
dc.identifier.urihttps://hdl.handle.net/10356/103554-
dc.identifier.urihttp://hdl.handle.net/10220/47351en
dc.description.abstractSpin–orbit coupling (SOC) is fundamental to a wide range of phenomena in condensed matter, spanning from a renormalisation of the free-electron g-factor, to the formation of topological insulators, and Majorana Fermions. SOC has also profound implications in spin-based quantum information, where it is known to limit spin lifetimes (T1) in the inversion asymmetric semiconductors such as GaAs. However, for electrons in silicon—and in particular those bound to phosphorus donor qubits—SOC is usually regarded weak, allowing for spin lifetimes of minutes in the bulk. Surprisingly, however, in a nanoelectronic device donor spin lifetimes have only reached values of seconds. Here, we reconcile this difference by demonstrating that electric field induced SOC can dominate spin relaxation of donor-bound electrons. Eliminating this lifetime-limiting effect by careful alignment of an external vector magnetic field in an atomically engineered device, allows us to reach the bulk-limit of spin-relaxation times. Given the unexpected strength of SOC in the technologically relevant silicon platform, we anticipate that our results will stimulate future theoretical and experimental investigation of phenomena that rely on strong magnetoelectric coupling of atomically confined spins.en
dc.description.sponsorshipNRF (Natl Research Foundation, S’pore)en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesnpj Quantum Informationen
dc.rights© 2018 The Author(s). This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.en
dc.subjectDRNTU::Science::Physicsen
dc.subjectSiliconen
dc.subjectSpin-relaxationen
dc.titleSpin–orbit coupling in silicon for electrons bound to donorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1038/s41534-018-0111-1en
dc.description.versionPublished versionen
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