Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103772
Title: AlN-AlN layer bonding and it's thermal characteristics
Authors: Shuyu, Bao
Lee, Kwang Hong
Chong, Gang Yih
Fitzgerald, Eugene A.
Tan, Chuan Seng
Keywords: DRNTU::Science::Physics::Atomic physics::Solid state physics
Issue Date: 2015
Source: Bao, S., Lee, K. H., Chong, G. Y., Fitzgerald, E. A., & Tan, C. S. (2015). AlN-AlN layer bonding and it's thermal characteristics. ECS journal of solid state science and technology, 4(7), 200-205.
Series/Report no.: ECS journal of solid state science and technology
Abstract: Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. After activation, substoichiometric nitrogen bound to aluminum, Al-O and Al-OH bonds were found at the thin film surface. The as-bonded wafer pairs are nearly void and particle free with a high bonding strength of 1527.8 ± 272.2 mJ/m2, enabling them to withstand the subsequent process steps. In addition, experimental results have indicated that the AlN-AlN bonded wafers can achieve a 23 and 16% improvement respectively in terms of heat dissipation compared with those using SiO2 and Al2O3 as the bonding layer. It is concluded that this AlN-AlN bonded wafer pairs can exhibit a better heat dissipation capability than other bonded counterparts.
URI: https://hdl.handle.net/10356/103772
http://hdl.handle.net/10220/25898
DOI: 10.1149/2.0121507jss
Rights: © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0121507jss] All rights reserved.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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