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https://hdl.handle.net/10356/103797| Title: | Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device | Authors: | Ang, Diing Shenp Zhang, H. Z. Gu, C. J. Yew, K. S. Wang, X. P. Lo, G. Q. |
Keywords: | DRNTU::Science::Physics | Issue Date: | 2014 | Source: | Zhang, H. Z., Ang, D. S., Gu, C. J., Yew, K. S., Wang, X. P., & Lo, G. Q. (2014). Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device. Applied physics letters, 105(22), 222106-. | Series/Report no.: | Applied physics letters | Abstract: | The role of the bottom interfacial layer (IL) in enabling stable complementary resistive switching (CRS) in the TiN/HfOx/IL/TiN resistive memory device is revealed. Stable CRS is obtained for the TiN/HfOx/IL/TiN device, where a bottom IL comprising Hf and Ti sub-oxides resulted from the oxidation of TiN during the initial stages of atomic-layer deposition of HfOx layer. In the TiN/HfOx/Pt device, where formation of the bottom IL is suppressed by the inert Pt metal, no CRS is observed. Oxygen-ion exchange between IL and the conductive path in HfOx layer is proposed to have caused the complementary bipolar switching behavior observed in the TiN/HfOx/IL/TiN device. | URI: | https://hdl.handle.net/10356/103797 http://hdl.handle.net/10220/24557 |
DOI: | 10.1063/1.4903341 | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4903341]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Journal Articles |
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| Role of interfacial layer on complementary resistive switching in the TiNHfOxTiN resistive memory device.pdf | 1.15 MB | Adobe PDF |  View/Open |
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