Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103949
Title: Al content-dependent resistive switching in Al-rich AlOxNy thin films
Authors: Zhu, W.
Chen, T. P.
Liu, Y.
Liu, Z.
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
DRNTU::Engineering::Nanotechnology
Issue Date: 2014
Source: Zhu, W., Chen, T. P., Liu, Y., & Liu, Z. (2014). Al content-dependent resistive switching in Al-rich AlOxNy thin films. Nanoscience and nanotechnology letters, 6(9), 835-839.
Series/Report no.: Nanoscience and nanotechnology letters
Abstract: Resistive switching can occur in Al-rich AlO x N y thin films depending on the Al content, i.e., the films with a small Al content exhibit resistive switching, but no resistive switch is observed in the films with a large Al content. The forming voltage, set/reset voltages, currents at the low- and high-resistance states, and conduction behavior of the low-resistance state are found to be dependent of the Al content. The phenomena can be explained by the changes in the complete filaments that consist of the metallic filaments formed by Al nanophases and the non-metallic filaments formed by oxygen vacancies.
URI: https://hdl.handle.net/10356/103949
http://hdl.handle.net/10220/24647
DOI: 10.1166/nnl.2014.1862
Rights: © 2014 American Scientific Publishers.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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