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Title: Review of nanostructured resistive switching memristor and its applications
Authors: Hu, S. G.
Wu, S. Y.
Jia, W. W.
Yu, Q.
Deng, L. J.
Fu, Y. Q.
Liu, Y.
Chen, T. P.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2014
Source: Hu, S. G., Wu, S. Y., Jia, W. W., Yu, Q., Deng, L. J., Fu, Y. Q., et al. (2014). Review of Nanostructured Resistive Switching Memristor and Its Applications. Nanoscience and Nanotechnology Letters, 6(9), 729-757.
Series/Report no.: Nanoscience and nanotechnology letters
Abstract: Resistive switching memristor, predicted as the fourth fundamental passive circuit element (in addition to resistor, capacitor, and inductor) in the world by Leon Chua in 1971 and demonstrated by Hewlett Packard laboratory in 2008, has attracted extensive research attention for its high scalability and versatility. In this paper, we reviewed the working mechanisms and mathematical models of nanostructured resistive switching memristors, and examined various emerging applications of the memristors, including memory, analog, logic and neuromorphic applications.
DOI: 10.1166/nnl.2014.1888
Rights: © 2014 American Scientific Publishers.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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