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|Title:||An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film||Authors:||Wong, J. I.
Chen, T. P.
Tay, Y. Y.
Yang, H. Y.
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2014||Source:||Wong, J. I., Chen, T. P., Tay, Y. Y., Liu, P., Yang, M., Liu, Z., et al. (2014). An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film. Nanoscience and nanotechnology letters, 6(9), 798-804.||Series/Report no.:||Nanoscience and nanotechnology letters||Abstract:||Lateral charge transfer in a Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film synthesized by Si ion implantation is investigated. When the nc-Si in one metal-oxide-semiconductor device is charged, the charging effect on both the charged device itself and the neighboring devices is monitored. With the existence of a continuous nc-Si layer in the spacing regions between the charged device and the neighboring devices, the charging operation induces a large flat-band voltage shift in the neighboring devices, and at the same time the charged device itself is also strongly affected in return. The phenomenon depends on both the nc-Si separation and the device spacing. It is attributed to the lateral charge transfer in the nc-Si layer. The result has an important indication for non-volatile memory applications of the nc-Si synthesized by the ion implantation technique.||URI:||https://hdl.handle.net/10356/103957
|DOI:||10.1166/nnl.2014.1861||Rights:||© 2014 American Scientific Publishers.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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