Please use this identifier to cite or link to this item:
Title: An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film
Authors: Wong, J. I.
Chen, T. P.
Tay, Y. Y.
Liu, P.
Yang, M.
Liu, Z.
Yang, H. Y.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2014
Source: Wong, J. I., Chen, T. P., Tay, Y. Y., Liu, P., Yang, M., Liu, Z., et al. (2014). An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film. Nanoscience and nanotechnology letters, 6(9), 798-804.
Series/Report no.: Nanoscience and nanotechnology letters
Abstract: Lateral charge transfer in a Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film synthesized by Si ion implantation is investigated. When the nc-Si in one metal-oxide-semiconductor device is charged, the charging effect on both the charged device itself and the neighboring devices is monitored. With the existence of a continuous nc-Si layer in the spacing regions between the charged device and the neighboring devices, the charging operation induces a large flat-band voltage shift in the neighboring devices, and at the same time the charged device itself is also strongly affected in return. The phenomenon depends on both the nc-Si separation and the device spacing. It is attributed to the lateral charge transfer in the nc-Si layer. The result has an important indication for non-volatile memory applications of the nc-Si synthesized by the ion implantation technique.
DOI: 10.1166/nnl.2014.1861
Rights: © 2014 American Scientific Publishers.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles
MSE Journal Articles


Updated on Jul 13, 2020


Updated on Nov 22, 2020

Page view(s)

Updated on Nov 26, 2020

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.