Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103957
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dc.contributor.authorWong, J. I.en
dc.contributor.authorChen, T. P.en
dc.contributor.authorTay, Y. Y.en
dc.contributor.authorLiu, P.en
dc.contributor.authorYang, M.en
dc.contributor.authorLiu, Z.en
dc.contributor.authorYang, H. Y.en
dc.date.accessioned2015-01-16T04:19:21Zen
dc.date.accessioned2019-12-06T21:23:34Z-
dc.date.available2015-01-16T04:19:21Zen
dc.date.available2019-12-06T21:23:34Z-
dc.date.copyright2014en
dc.date.issued2014en
dc.identifier.citationWong, J. I., Chen, T. P., Tay, Y. Y., Liu, P., Yang, M., Liu, Z., et al. (2014). An experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin film. Nanoscience and nanotechnology letters, 6(9), 798-804.en
dc.identifier.urihttps://hdl.handle.net/10356/103957-
dc.description.abstractLateral charge transfer in a Si nanocrystal (nc-Si) layer embedded in a SiO2 thin film synthesized by Si ion implantation is investigated. When the nc-Si in one metal-oxide-semiconductor device is charged, the charging effect on both the charged device itself and the neighboring devices is monitored. With the existence of a continuous nc-Si layer in the spacing regions between the charged device and the neighboring devices, the charging operation induces a large flat-band voltage shift in the neighboring devices, and at the same time the charged device itself is also strongly affected in return. The phenomenon depends on both the nc-Si separation and the device spacing. It is attributed to the lateral charge transfer in the nc-Si layer. The result has an important indication for non-volatile memory applications of the nc-Si synthesized by the ion implantation technique.en
dc.language.isoenen
dc.relation.ispartofseriesNanoscience and nanotechnology lettersen
dc.rights© 2014 American Scientific Publishers.en
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin filmsen
dc.titleAn experimental study of lateral charge transfer in silicon nanocrystal layer embedded in SiO2 thin filmen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.contributor.researchFacility for Analysis, Characterisation, Testing and Simulationen
dc.identifier.doi10.1166/nnl.2014.1861en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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