Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/103958
Title: Morphology of silicon/silicon-oxide nanowires grown from nickel-coated silicon wafers
Authors: Li, Feng Ji
Zhang, Sam
Guo, Jun
Li, Bo
Keywords: DRNTU::Engineering::Materials::Nanostructured materials
DRNTU::Engineering::Aeronautical engineering::Materials of construction
Issue Date: 2014
Source: Li, F. J., Zhang, S., Guo, J., & Li, B. (2014). Morphology of silicon/silicon-oxide nanowires grown from nickel-coated silicon wafers. Nanoscience and nanotechnology letters, 6(6), 505-514.
Series/Report no.: Nanoscience and nanotechnology letters
Abstract: Silicon (Si) nanowires are important building blocks in the devices of photonics, quantum-dots, optoelectronics and energy. So far, however, the morphology is yet well studied. In this work, Si/Si-oxide nanowires were grown through thermal annealing of nickel (Ni) coated Si wafers. Side-by-side biaxial, smooth or sinusoidal triple-concentric, fishbone-profiled, Ni-nanosphere entrapped nanowires, and the transitional morphologies were observed co-existing with the most abundant coaxial ones. The relation between the nanowires and the seeding particles is carefully explored via transmission electron microscopy and selected area electron diffraction pattern. In conjunction with the scrutiny of the existing mechanisms, it is found that the morphology of the nanowires is controlled by the diameter, vibration, phase distribution, and the eutectic precipitation of the seeding Ni–Si–O droplets. A detailed growth mechanism is proposed.
URI: https://hdl.handle.net/10356/103958
http://hdl.handle.net/10220/24658
DOI: 10.1166/nnl.2014.1817
Rights: © 2014 American Scientific Publishers.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles

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