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Title: On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer
Authors: Zhang, Zi-Hui
Ji, Yun
Liu, Wei
Kyaw, Zabu
Ju, Zhengang
Zhang, Xueliang
Hasanov, Namig
Lu, Shunpeng
Zhang, Yiping
Zhu, Binbin
Volkan Demir, Hilmi
Tan, Swee Tiam
Sun, Xiao Wei
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Zhang, Z.-H., Ji, Y., Liu, W., Tan, S. T., Kyaw, Z., Ju, Z., et al. (2014). On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer. Applied Physics Letters, 104(7), 073511-.
Series/Report no.: Applied Physics Letters
Abstract: In this work, the origin of electron blocking effect of n-type Al0.25Ga0.75N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.
ISSN: 0003-6951
DOI: 10.1063/1.4866041
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI:  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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