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|Title:||Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells||Authors:||Makino, T.
Tuan, N. T.
Chia, C. H.
|Keywords:||DRNTU::Science::Physics::Optics and light||Issue Date:||2001||Source:||Makino, T., Tuan, N. T., Sun, H. D., Chia, C. H., Segawa, Y., Kawasaki, M., et al. (2001). Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells. Applied Physics Letters., 78, 1979.||Series/Report no.:||Applied Physics Letters.||Abstract:||We report on temperature dependence of excitonic photoluminescence (PL) from ZnO/(Mg, Zn)O multiple quantum wells (MQWs). Two kinds of MQWs having different barrier heights grown by laser molecular-beam epitaxy showed significantly different temperature dependences of PL spectra; in ZnO/Mg0.27Zn0.73O MQWs, the PL peak energy at 50–200 K was a monotonically increasing function of temperature, which was opposite to that ascribed by band gap shrinkage. Moreover, spectra taken at 95–200 K encompassed two peaks, both of which originated from recombination of localized excitons. The temperature-induced shift (redshift-blueshift-peak duplication-redshift) At 5–300 K is caused by a change in the exciton dynamics with increasing temperature due to inhomogeneity and the exciton localization effect. On the other hand, the corresponding dependence in ZnO/Mg0.12Zn0.88O MQWs (lower barrier height) was similar to that in bulk II–VI semiconductors.||URI:||https://hdl.handle.net/10356/104086
|ISSN:||0003-6951||DOI:||10.1063/1.1357451||Rights:||Applied Physics Letters © copyright 2001 American Institute of Physics. The journal's website is located at http://apl.aip.org/.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||SPMS Journal Articles|
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