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https://hdl.handle.net/10356/104110| Title: | Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes | Authors: | Ji, Yun Liu, Wei Erdem, Talha Chen, Rui Tan, Swee Tiam Zhang, Zi-Hui Ju, Zhengang Zhang, Xueliang Sun, Handong Sun, Xiao Wei Zhao, Yuji DenBaars, Steven P. Nakamura, Shuji Volkan Demir, Hilmi |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics | Issue Date: | 2014 | Source: | Ji, Y., Liu, W., Erdem, T., Chen, R., Tan, S. T., Zhang, Z.-H., et al. (2014). Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes. Applied Physics Letters, 104(14), 143506-. | Series/Report no.: | Applied physics letters | Abstract: | The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112¯ 2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates. | URI: | https://hdl.handle.net/10356/104110 http://hdl.handle.net/10220/19530 |
ISSN: | 0003-6951 | DOI: | 10.1063/1.4870840 | Rights: | © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4870840. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Journal Articles SPMS Journal Articles |
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| Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN.pdf | 1.14 MB | Adobe PDF |  View/Open |
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