Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104110
Title: Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
Authors: Ji, Yun
Liu, Wei
Erdem, Talha
Chen, Rui
Tan, Swee Tiam
Zhang, Zi-Hui
Ju, Zhengang
Zhang, Xueliang
Sun, Handong
Sun, Xiao Wei
Zhao, Yuji
DenBaars, Steven P.
Nakamura, Shuji
Volkan Demir, Hilmi
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2014
Source: Ji, Y., Liu, W., Erdem, T., Chen, R., Tan, S. T., Zhang, Z.-H., et al. (2014). Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes. Applied Physics Letters, 104(14), 143506-.
Series/Report no.: Applied physics letters
Abstract: The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112¯ 2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.
URI: https://hdl.handle.net/10356/104110
http://hdl.handle.net/10220/19530
ISSN: 0003-6951
DOI: 10.1063/1.4870840
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4870840.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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