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Title: Influence of the excess Al content on memory behaviors of Worm devices based on sputtered Al-rich aluminum oxide thin films
Authors: Liu, Z.
Liu, P.
Li, H. K.
Chen, T. P.
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2014
Source: Liu, Z., Liu, P., Li, H. K., & Chen, T. P. (2014). Influence of the excess Al content on memory behaviors of Worm devices based on sputtered Al-rich aluminum oxide thin films. Nanoscience and nanotechnology letters, 6(9), 845-848.
Series/Report no.: Nanoscience and nanotechnology letters
Abstract: Reactive sputtering has been used to synthesize Al-rich Al2O3 thin films. After post-deposition thermal annealing, the excess Al content forms Al nanocrystals (nc-Al) which are dispersed in the Al2O3 matrix. In the Al/Al-rich Al2O3/p-Si structure, the current conduction which follows a Schottky emission process can be greatly enhanced by a charging process with negative voltage pulses and then maintained for considerable duration, realizing write-once-read-many-times (WORM) memory behaviors. The current conduction enhancement is attributed to the reduction of effective Schottky barrier caused by charging-induced hole trapping in the nc-Al related defects near the oxide/p-Si interface. It is found that the sample with lower concentration of nc-Al has a larger memory window due to the lower initial current. In addition, the retention is also better since the release of trapped charges is more difficult with less nc-Al related leakage paths present in the oxide film. The concentration of excess Al content in the Al-rich Al2O3 thin film can be optimized to achieve large memory windows as well as good retention characteristics in the associated WORM memory devices.
DOI: 10.1166/nnl.2014.1860
Rights: © 2014 American Scientific Publishers.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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