Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104246
Title: InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature
Authors: Tobing, Landobasa Yosef Mario
Tong, Jinchao
Qian, Li
Suo, Fei
Zhang, Dao Hua
Keywords: GaSb
Engineering::Electrical and electronic engineering
Room Temperature
Issue Date: 2018
Source: Tong, J., Tobing, L. Y. M., Qian, L., Suo, F., & Zhang, D. H. (2018). InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb with high mid-infrared photodetection performance at room temperature. Journal of Materials Science, 53(18), 13010-13017. doi:10.1007/s10853-018-2573-0
Series/Report no.: Journal of Materials Science
Abstract: We present the design, fabrication, and characterization of middle-wavelength infrared photodetector based on active InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb substrate. In this structure, the active absorption layer is sandwiched between thin quaternary p-type and n-type AlInAsSb layers and a heavily doped AlGaSb layer is introduced to reduce dark current. We observed good lattice matching between GaSb substrates and epitaxial layers by high-resolution X-ray diffraction. Photoluminescence (PL) spectrum at 13 K shows a full width at half maximum of ~ 29 meV, demonstrating good quality active absorption layers. The band gap energy of InAs0.9Sb0.1 is derived as ~ 0.322 eV at 0 K by Varshni fitting from PL spectra at different temperatures. A rather flat room-temperature responsivity of ~ 0.8–0.9 AW−1 over a wavelength range of ~ 2.1 µm is demonstrated without antireflection coating. A detectivity of 8.9 × 108 cm Hz1/2 W−1 at 3.5 µm for room-temperature operation is achieved under applied bias of − 0.5 V.
URI: https://hdl.handle.net/10356/104246
http://hdl.handle.net/10220/50221
ISSN: 0022-2461
DOI: 10.1007/s10853-018-2573-0
Rights: © 2018 Springer Science+Business Media, LLC, part of Springer Nature. All rights reserved. This paper was published in Journal of Materials Science and is made available with permission of Springer Science+Business Media, LLC, part of Springer Nature.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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