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Title: Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy
Authors: D'Costa, Vijay Richard
Tan, Kian Hua
Jia, Bo Wen
Yoon, Soon Fatt
Yeo, Yee-Chia
Keywords: III-V semiconductors
Critical point phenomena
Dielectric thin films
Dielectric function
Issue Date: 2015
Source: D'Costa, V. R., Tan, K. H., Jia, B. W., Yoon, S. F., & Yeo, Y.-C. (2015). Mid-infrared to ultraviolet optical properties of InSb grown on GaAs by molecular beam epitaxy. Journal of Applied Physics, 117(22), 223106-.
Series/Report no.: Journal of Applied Physics
Abstract: Spectroscopic ellipsometry was used to investigate the optical properties of an InSb film grown on a GaAs (100) substrate, and to compare the optical properties of InSb film with those of bulk InSb. The film was grown by molecular beam epitaxy under conditions intended to form 90° misfit dislocations at the InSb-GaAs interface. The complex dielectric function obtained in a wide spectroscopic range from 0.06–4.6 eV shows the critical point transitions E 0, E 1, E 1 + Δ1, E′0 , and E 2. The amplitudes, energy transitions, broadenings, and phase angles have been determined using a derivative analysis. Comparing film and bulk critical point results reveal that the epitaxial film is nearly relaxed and has bulk-like optical characteristics.
DOI: 10.1063/1.4922586
Rights: © 2015 American Institute of Physics (AIP). This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of American Institute of Physics (AIP). The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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