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Title: Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2
Authors: Banerjee, Karan
Son, Jaesung
Deorani, Praveen
Ren, Peng
Wang, Lan
Yang, Hyunsoo
Keywords: DRNTU::Science::Physics
Issue Date: 2014
Source: Banerjee, K., Son, J., Deorani, P., Ren, P., Wang, L., & Yang, H. (2014). Defect-induced negative magnetoresistance and surface state robustness in the topological insulator BiSbTeSe2. Physical review B, 90(23), 235427-.
Series/Report no.: Physical review B
Abstract: Absence of backscattering and occurrence of weak antilocalization are two characteristic features of topological insulators. We find that the introduction of defects results in the appearance of a negative contribution to magnetoresistance (MR) in the topological insulator BiSbTeSe2 at temperatures below 50 K. Our analysis shows that the negative MR originates from an increase in the density of defect states created by the introduction of disorder, which leaves the surface states unaffected. We find a decrease in the magnitude of the negative MR contribution with increasing temperature and a robustness of the topological surface states to external disorder.
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.90.235427
Rights: © 2014 American Physical Society. This paper was published in Physical Review B and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:SPMS Journal Articles

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