Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104483
Title: A highly efficient fully integrated GaN power amplifier for 5-GHz WLAN 802.11ac application
Authors: Liu, Bei
Mao, Mengda
Khanna, Devrishi
Choi, Pilsoon
Boon, Chirn Chye
Fitzgerald, Eugene A.
Keywords: High Efficiency
Engineering::Electrical and electronic engineering
Monolithic Microwave Circuit
Issue Date: 2018
Source: Liu, B., Mao, M., Khanna, D., Choi, P., Boon, C. C., & Fitzgerald, E. A. (2018). A highly efficient fully integrated GaN power amplifier for 5-GHz WLAN 802.11ac application. IEEE Microwave and Wireless Components Letters, 28(5), 437-439. doi:10.1109/LMWC.2018.2812107
Series/Report no.: IEEE Microwave and Wireless Components Letters
Abstract: In this letter, a novel compact on-chip output matching network to achieve harmonic impedance matching is proposed. With the proposed matching network, a highly efficient GaN monolithic microwave circuit power amplifier (PA) is designed for 5-GHz wireless local area network 802.11ac application. The implemented PA achieves a maximum power-added efficiency (PAE) of 49.5%-61.3% over the frequency band from 4.9 to 5.9 GHz, with a saturated output power (Psat) of 34.6-36.1 dBm. When tested with 802.11ac VHT80 MCS9 (80 MHz, 256-quadratic -amplitude modulation) signal with 11.3-dB peak-to-average power ratio, the PA achieves an average output power of 23.7-26.3 dBm, with a PAE of 24.9%-30.9%, while meeting the standard error vector magnitude specification of -32 dB.
URI: https://hdl.handle.net/10356/104483
http://hdl.handle.net/10220/50017
ISSN: 1531-1309
DOI: 10.1109/LMWC.2018.2812107
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/LMWC.2018.2812107
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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