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Title: A novel 2.6–6.4 GHz highly integrated broadband GaN power amplifier
Authors: Liu, Bei
Mao, Mengda
Khanna, Devrishi
Boon, Chirn-Chye
Choi, Pilsoon
Fitzgerald, Eugene A.
Keywords: Engineering::Electrical and electronic engineering
Gallium Nitride
Issue Date: 2017
Source: Liu, B., Mao, M., Khanna, D., Boon, C.-C., Choi, P., & Fitzgerald, E. A. (2018). A novel 2.6–6.4 GHz highly integrated broadband GaN power amplifier. IEEE Microwave and Wireless Components Letters, 28(1), 37-39. doi:10.1109/LMWC.2017.2772806
Series/Report no.: IEEE Microwave and Wireless Components Letters
Abstract: In this letter, a novel methodology to achieve output broadband matching is proposed. Based on this methodology, a broadband gallium nitride power amplifier (PA) with input matching and stabilization circuit integrated on-chip is designed. The implemented PA achieves a maximum drain efficiency of 62%-79.2% from 2.6 to 6.4 GHz (84.4% fractional bandwidth), with a saturated output power (Psat) of 34.3-35.8 dBm, while providing a gain larger than 10 dB. When tested with 802.11ac VHT80 MC9 (80 MHz, 256-QAM) with 11.3-dB peak-to-average power ratio, PA achieves a drain efficiency of 22.1%-25.2% with an average output power of 23-25.4 dBm across the whole band, while meeting the standard specification of error vector magnitude below -32 dB.
ISSN: 1531-1309
DOI: 10.1109/LMWC.2017.2772806
Rights: © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at:
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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