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|Title:||A fully integrated Class-J GaN MMIC power amplifier for 5-GHz WLAN 802.11ax application||Authors:||Liu, Bei
Boon, Chirn Chye
Fitzgerald, Eugene A.
Engineering::Electrical and electronic engineering
Monolithic Microwave Circuit
|Issue Date:||2018||Source:||Liu, B., Mao, M., Boon, C. C., Choi, P., Khanna, D., & Fitzgerald, E. A. (2018). A fully integrated Class-J GaN MMIC power amplifier for 5-GHz WLAN 802.11ax application. IEEE Microwave and Wireless Components Letters, 28(5), 434-436. doi:10.1109/LMWC.2018.2811338||Series/Report no.:||IEEE Microwave and Wireless Components Letters||Abstract:||This letter presents a fully integrated Class-J GaN monolithic microwave circuit power amplifier (PA), which is fabricated in Woolfspeed 0.25-μm GaN-on-SiC technology. This PA is the first published design for the emerging IEEE 802.11ax application in the literature. When tested with 80-MHz 256-quadratic-amplitude modulation 802.11ax signal with 11.25-dB peak-to-average power ratio, the PA delivers average output power of 27.3-30.3 dBm from 4.9 to 5.9 GHz, with power-added efficiency of 16.7% to 27.3%, while meeting the standard specification of error vector magnitude below -32 dB.||URI:||https://hdl.handle.net/10356/104486
|ISSN:||1531-1309||DOI:||10.1109/LMWC.2018.2811338||Rights:||© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org/10.1109/LMWC.2018.2811338||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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