Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104587
Title: Analysis of correlated gate and drain random telegraph noise in post-soft breakdownTiN/HfLaO/SiOx nMOSFETs
Authors: Liu, Wenhu
Padovani, Andrea
Larcher, Luca
Raghavan, Nagarajan
Pey, Kin Leong
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2014
Source: Liu, W., Padovani, A., Larcher, L., Raghavan, N., & Pey, K. L. (2014). Analysis of Correlated Gate and Drain Random Telegraph Noise in Post-Soft BreakdownTiN/HfLaO/SiOx nMOSFETs. IEEE Electron Device Letters, 35(2), 157-159.
Series/Report no.: IEEE Electron Device Letters
Abstract: We investigate correlated gate (IG) and drain (ID) random telegraph noise phenomena observed in post breakdown regime on nMOSFET TiN/HfLaO/ SiOx gate-stacks. We observe two different IG-ID correlation patterns (i.e., of the same and opposite polarities) that we attributed to charge trapping into oxygen vacancy traps of different kinds located in the SiOx close to the Si/SiOx interface. Results reported in this letter provide useful information for improving the understanding of IG/ID RTN phenomena and its impact on the reliability of post-SBD nanometer MOSFETs.
URI: https://hdl.handle.net/10356/104587
http://hdl.handle.net/10220/20244
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2295923
Rights: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/LED.2013.2295923].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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