Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104687
Title: Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer
Authors: Jia, Bo Wen
Tan, Kian Hua
Loke, Wan Khai
Wicaksono, Satrio
Yoon, Soon Fatt
Keywords: Molecular beam epitaxy
Antimonides
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2018
Source: Jia, B. W., Tan, K. H., Loke, W. K., Wicaksono, S., & Yoon, S. F. (2018). Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer. Journal of Crystal Growth, 490, 97-103. doi:10.1016/j.jcrysgro.2018.03.026
Series/Report no.: Journal of Crystal Growth
Abstract: A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 µm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.
URI: https://hdl.handle.net/10356/104687
http://hdl.handle.net/10220/50025
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2018.03.026
Rights: © 2018 Elsevier B.V. All rights reserved. This paper was published in Journal of Crystal Growth and is made available with permission of Elsevier B.V.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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