Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104718
Title: Mg/W-codoped vanadium dioxide thin films with enhanced visible transmittance and low phase transition temperature
Authors: Long, Yi
Wang, Ning
Liu, Shiyu
Zeng, X. T.
Magdassi, Shlomo
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Issue Date: 2015
Source: Wang, N., Liu, S., Zeng, X. T., Magdassi, S., & Long, Y. (2015). Mg/W-codoped vanadium dioxide thin films with enhanced visible transmittance and low phase transition temperature. Journal of materials chemistry C, in press.
Series/Report no.: Journal of materials chemistry C
Abstract: Vanadium dioxide (VO2), with a reversible phase transition near ambient temperature, has been found to be a promising candidate for energy-saving smart windows. However, its use is constrained by its low visible transmission (Tlum) and high transition temperature (τc). In this paper, by codoping tungsten (W) and magnesium (Mg) in VO2, a good combination of low τc (~35 °C) and high Tlum (81.3%) was achieved. The τc declines with decreasing Mg doping level in Mg/W-codoped samples, which is the opposite effect of doping with only Mg, suggesting a synergistic effect of the two dopants arising from the e− and h+ carrier neutralization. In addition, the band gap of Mg/W-codoped VO2 was gradually widened; this is attributed to the depressed absorption, which enhanced the Tlum.
URI: https://hdl.handle.net/10356/104718
http://hdl.handle.net/10220/25845
ISSN: 2050-7526
DOI: 10.1039/C5TC01062D
Schools: School of Materials Science & Engineering 
Organisations: A*STAR SIMTech
Rights: © 2015 The Royal Society of Chemistry. This is the author created version of a work that has been peer reviewed and accepted for publication by Journal of Materials Chemistry C, The Royal Society of Chemistry. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1039/C5TC01062D].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles
SIMTech Journal Articles

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