Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104767
Title: Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers
Authors: Zhang, Zi-Hui
Liu, Wei
Ju, Zhengang
Tiam Tan, Swee
Ji, Yun
Kyaw, Zabu
Zhang, Xueliang
Wang, Liancheng
Wei Sun, Xiao
Volkan Demir, Hilmi
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2014
Source: Zhang, Z.-H., Liu, W., Ju, Z., Tiam Tan, S., Ji, Y., Kyaw, Z., et al. (2014). Self-screening of the quantum confined Stark effect by the polarization induced bulk charges in the quantum barriers. Applied Physics Letters, 104(24), 243501-.
Series/Report no.: Applied physics letters
Abstract: InGaN/GaN light-emitting diodes (LEDs) grown along the polar orientations significantly suffer from the quantum confined Stark effect (QCSE) caused by the strong polarization induced electric field in the quantum wells, which is a fundamental problem intrinsic to the III-nitrides. Here, we show that the QCSE is self-screened by the polarization induced bulk charges enabled by designing quantum barriers. The InN composition of the InGaN quantum barrier graded along the growth orientation opportunely generates the polarization induced bulk charges in the quantum barrier, which well compensate the polarization induced interface charges, thus avoiding the electric field in the quantum wells. Consequently, the optical output power and the external quantum efficiency are substantially improved for the LEDs. The ability to self-screen the QCSE using polarization induced bulk charges opens up new possibilities for device engineering of III-nitrides not only in LEDs but also in other optoelectronic devices.
URI: https://hdl.handle.net/10356/104767
http://hdl.handle.net/10220/20274
ISSN: 0003-6951
DOI: 10.1063/1.4883894
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: http://dx.doi.org/10.1063/1.4883894.  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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