Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104825
Title: XPS quantification of the hetero-junction interface energy
Authors: Ma, Zengsheng
Wang, Yan
Huang, Yongli
Zhou, Zhaofeng
Zhou, Yichun
Zheng, Weitao
Sun, Changqing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Ma, Z., Wang, Y., Huang, Y., Zhou, Z., Zhou, Y., Zheng, W. T., & Sun, C. (2013). XPS quantification of the hetero-junction interface energy. Applied surface science, 265, 71-77.
Series/Report no.: Applied surface science
Abstract: We present an approach for quantifying the heterogeneous interface bond energy using X-ray photoelectron spectroscopy (XPS). Firstly, from analyzing the XPS core-level shift of the elemental surfaces we obtained the energy levels of an isolated atom and their bulk shifts of the constituent elements for reference; then we measured the energy shifts of the specific energy levels upon interface alloy formation. Subtracting the referential spectrum from that collected from the alloy, we can distil the interface effect on the binding energy. Calibrated based on the energy levels and their bulk shifts derived from elemental surfaces, we can derive the bond energy, energy density, atomic cohesive energy, and free energy at the interface region. This approach has enabled us to clarify the dominance of quantum entrapment at CuPd interface and the dominance of polarization at AgPd and BeW interfaces, as the origin of interface energy change. Developed approach not only enhances the power of XPS but also enables the quantification of the interface energy at the atomic scale that has been an issue of long challenge.
URI: https://hdl.handle.net/10356/104825
http://hdl.handle.net/10220/16566
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2012.10.112
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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