Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/104828
Title: | A high speed low power CAM with a parity bit and power-gated ML sensing | Authors: | Do, Anh Tuan Chen, Shoushun Kong, Zhi Hui Yeo, Kiat Seng |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Do, A.-T., Chen, S., Kong, Z.-H., & Yeo, K. S. (2013). A high speed low power CAM with a parity bit and power-gated ML sensing. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 21(1), 151-156. | Series/Report no.: | IEEE Transactions on Very Large Scale Integration (VLSI) Systems | Abstract: | Content addressable memory (CAM) offers high-speed search function in a single clock cycle. Due to its parallel match-line (ML) comparison, CAM is power-hungry. Thus, robust, high-speed and low-power ML sense amplifiers are highly sought-after in CAM designs. In this paper, we introduce a parity bit that leads to 39% sensing delay reduction at a cost of less than 1% area and power overhead. Furthermore, we propose an effective gated-power technique to reduce the peak and average power consumption and enhance the robustness of the design against process variations. A feedback loop is employed to auto-turn off the power supply to the comparison elements and hence reduce the average power consumption by 64%. The proposed design can work at a supply voltage down to 0.5 V. | URI: | https://hdl.handle.net/10356/104828 http://hdl.handle.net/10220/16855 |
DOI: | 10.1109/TVLSI.2011.2178276 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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