Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104828
Title: A high speed low power CAM with a parity bit and power-gated ML sensing
Authors: Do, Anh Tuan
Chen, Shoushun
Kong, Zhi Hui
Yeo, Kiat Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Do, A.-T., Chen, S., Kong, Z.-H., & Yeo, K. S. (2013). A high speed low power CAM with a parity bit and power-gated ML sensing. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 21(1), 151-156.
Series/Report no.: IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Abstract: Content addressable memory (CAM) offers high-speed search function in a single clock cycle. Due to its parallel match-line (ML) comparison, CAM is power-hungry. Thus, robust, high-speed and low-power ML sense amplifiers are highly sought-after in CAM designs. In this paper, we introduce a parity bit that leads to 39% sensing delay reduction at a cost of less than 1% area and power overhead. Furthermore, we propose an effective gated-power technique to reduce the peak and average power consumption and enhance the robustness of the design against process variations. A feedback loop is employed to auto-turn off the power supply to the comparison elements and hence reduce the average power consumption by 64%. The proposed design can work at a supply voltage down to 0.5 V.
URI: https://hdl.handle.net/10356/104828
http://hdl.handle.net/10220/16855
DOI: 10.1109/TVLSI.2011.2178276
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

SCOPUSTM   
Citations 10

50
Updated on Mar 14, 2025

Web of ScienceTM
Citations 20

20
Updated on Oct 29, 2023

Page view(s) 10

888
Updated on Mar 23, 2025

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.