Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104840
Title: Germanium p-i-n avalanche photodetector fabricated by point defect healing process
Authors: Baek, Jung Woo
Kim, Gwang Sik
Yu, Hyun-Yong
Park, Jin-Hong
Shim, Jae Woo
Kang, Dong-Ho
Yoo, Gwangwe
Hong, Seong-Taek
Jung, Woo-Shik
Kuh, Bong Jin
Lee, Beomsuk
Shin, Dongjae
Ha, Kyoungho
Keywords: DRNTU::Engineering::Mechanical engineering::Control engineering
Issue Date: 2014
Source: Shim, J., Kang, D. H., Yoo, G., Hong, S. T., Jung, W. S., Kuh, B. J., et al. (2014). Germanium p-i-n avalanche photodetector fabricated by point defect healing process. Optics Letters, 39(14), 4204-4207.
Series/Report no.: Optics letters
Abstract: In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5  V), low operating voltage (avalanche breakdown voltage=8–13  V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017  cm−3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.
URI: https://hdl.handle.net/10356/104840
http://hdl.handle.net/10220/20317
DOI: 10.1364/OL.39.004204
Rights: © 2014 Optical Society of America. This paper was published in Optics Letters and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OL.39.004204]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MAE Journal Articles

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