Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/104840
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dc.contributor.authorBaek, Jung Wooen
dc.contributor.authorKim, Gwang Siken
dc.contributor.authorYu, Hyun-Yongen
dc.contributor.authorPark, Jin-Hongen
dc.contributor.authorShim, Jae Wooen
dc.contributor.authorKang, Dong-Hoen
dc.contributor.authorYoo, Gwangween
dc.contributor.authorHong, Seong-Taeken
dc.contributor.authorJung, Woo-Shiken
dc.contributor.authorKuh, Bong Jinen
dc.contributor.authorLee, Beomsuken
dc.contributor.authorShin, Dongjaeen
dc.contributor.authorHa, Kyounghoen
dc.date.accessioned2014-08-18T02:30:44Zen
dc.date.accessioned2019-12-06T21:40:57Z-
dc.date.available2014-08-18T02:30:44Zen
dc.date.available2019-12-06T21:40:57Z-
dc.date.copyright2014en
dc.date.issued2014en
dc.identifier.citationShim, J., Kang, D. H., Yoo, G., Hong, S. T., Jung, W. S., Kuh, B. J., et al. (2014). Germanium p-i-n avalanche photodetector fabricated by point defect healing process. Optics Letters, 39(14), 4204-4207.en
dc.identifier.urihttps://hdl.handle.net/10356/104840-
dc.description.abstractIn this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 μA below VR=5  V), low operating voltage (avalanche breakdown voltage=8–13  V), and high multiplication gain (440–680) by exploiting a point defect healing method (between 600°C and 650°C) and optimizing the doping concentration of the intrinsic region (p-type ∼1017  cm−3). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications.en
dc.language.isoenen
dc.relation.ispartofseriesOptics lettersen
dc.rights© 2014 Optical Society of America. This paper was published in Optics Letters and is made available as an electronic reprint (preprint) with permission of Optical Society of America. The paper can be found at the following official DOI: [http://dx.doi.org/10.1364/OL.39.004204]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Mechanical engineering::Control engineeringen
dc.titleGermanium p-i-n avalanche photodetector fabricated by point defect healing processen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Mechanical and Aerospace Engineeringen
dc.identifier.doi10.1364/OL.39.004204en
dc.description.versionPublished versionen
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