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Title: A ZnTaOx based resistive switching random access memory
Authors: Zheng, K.
Zhao, J. L.
Leck, K. S.
Teo, K. L.
Yeo, E. G.
Sun, X. W.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Issue Date: 2014
Source: Zheng, K., Zhao, J. L., Leck, K. S., Teo, K. L., Yeo, E. G., & Sun, X. W. (2014). A ZnTaOx Based Resistive Switching Random Access Memory. ECS Solid State Letters, 3(7), Q36-Q39.
Series/Report no.: ECS Solid State Letters
Abstract: The improved resistive switching performance of TaOx by introducing ZnO was reported in this paper. By co-sputtering, the ZnTaOx device shows better endurance, lower operating voltage and more uniform resistance distribution. The improvement is mainly due to the more abundant intrinsic defects such as oxygen vacancies which facilitates the formation of conductive filaments in the oxide compound.
ISSN: 2162-8742
DOI: 10.1149/2.0101407ssl
Rights: © 2014 The Electrochemical Society. This paper was published in ECS Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI:  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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