Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105002
Title: Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM
Authors: Liu, Binghai
Dong, Zhi Li
Hua, Younan
Fu, Chao
Li, Xiaomin
Tan, Pik Kee
Zhao, Yuzhe
Keywords: DRNTU::Engineering::Materials
Failure Analysis
Semiconductors
Issue Date: 2018
Source: Liu, B., Dong, Z. L., Hua, Y., Fu, C., Li, X., Tan, P. K., & Zhao, Y. (2018). Electron-beam radiation induced degradation of silicon nitride and its impact to semiconductor failure analysis by TEM. AIP Advances, 8(11), 115327-. doi:10.1063/1.5051813
Series/Report no.: AIP Advances
Abstract: By in-situ transmission electron microscopy (TEM), we performed a detailed study on the electron-beam radiation damage to nanostructured silicon nitride thin-film process layers in a typical semiconductor NVM device. It was found that high-dose electron-beam radiation at 200 kV led to rapid degradation of silicon nitride process layers, i.e. thin-downing of nanostructured silicon nitride, inter-diffusion of O and N, the formation of bubble-like defects and segregation of N at neighbouring interfaces. Further detailed analysis revealed that radiation-induced modification in the microstructure and chemical composition of silicon nitride layers could be ascribed to the electron radiation induced knock-on damage and ionization damage. The radiation enhanced diffusion (RED) accounted for the continuous thin-down of the nitride process layer and the formation of bubble-like defects in thick nitride spacer process layers. The work well demonstrated the electron-beam sensitivity of nanostructured silicon nitride materials in the semiconductor devices, and thus may give useful information about electron-dose control during TEM failure analysis of the semiconductor devices containing nanostructured silicon nitride process layers.
URI: https://hdl.handle.net/10356/105002
http://hdl.handle.net/10220/47400
DOI: 10.1063/1.5051813
Rights: © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

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