Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105017
Title: Well-aligned SiC nanoneedle arrays for excellent field emitters
Authors: Wu, Renbing
Zhou, Kun
Qian, Xukun
Wei, Jun
Tao, Yun
Sow, Chorng Haur
Wang, Liuying
Huang, Yizhong
Issue Date: 2013
Source: Wu, R., Zhou, K., Qian, X., Wei, J., Tao, Y., Sow, C. H., Wang, L.,& Huang, Y. (2013). Well-aligned SiC nanoneedle arrays for excellent field emitters. Materials Letters, 91, 220-223.
Series/Report no.: Materials letters
Abstract: Well-aligned SiC nanowire arrays are successfully synthesized on carbon cloth by a facile chemical vapor deposition without using any templates. Such nanowire arrays acting as cold electron emitters exhibit excellent field emission performance with very low turn-on and threshold voltages of 1.3 V μm−1 and 2.2 V μm−1, respectively, and high field enhancement factor (∼3667). The superior field emission properties are mainly attributed to well aligned and tapered morphology of SiC and the enhanced electrons transport in the nanowires due to the good electric contact with the carbon fabric substrate where they grow.
URI: https://hdl.handle.net/10356/105017
http://hdl.handle.net/10220/16572
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2012.09.096
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MAE Journal Articles

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