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https://hdl.handle.net/10356/105025| Title: | Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate | Authors: | Bose, Sumanta Fan, W. J. Jian, C. Zhang, D. H. Tan, Chuan Seng |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics | Issue Date: | 2014 | Source: | Bose, S., Fan, W. J., Jian, C., Zhang, D. H., & Tan, C. S. (2014). Strain profile, electronic band structure and optical gain of self-assembled Ge quantum dots on SiGe virtual substrate. Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International , 129-130. doi: 10.1109/ISTDM.2014.6874705 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6874705&isnumber=6874620 | Conference: | 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) | Abstract: | Group IV (Si, Ge, Sn) alloys are promising materials for future optoelectronic devices. Their compatibility with Si technology would allow us to engineer novel growth techniques and bandgap engineering methods to obtain direct band gap materials [1]. Other alloy compositions could allow wider wavelength range [2] which can revolutionize the photonics industry - leading to new design of LEDs, photodetectors, laser diodes and electro optical modulators. | URI: | https://hdl.handle.net/10356/105025 http://hdl.handle.net/10220/20424 |
DOI: | 10.1109/ISTDM.2014.6874705 | Schools: | School of Electrical and Electronic Engineering | Research Centres: | Centre for Micro-/Nano-electronics (NOVITAS) | Rights: | © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: [http://dx.doi.org/10.1109/ISTDM.2014.6874705]. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
| Appears in Collections: | EEE Conference Papers |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Cam Ready-ID 115-ISTDM2014-Strain Profile, Electronic band structure and Optical Gain of self-assembled Ge quantum dots on SiGe virtual substrate.pdf | Conference main paper 4 pages long | 665.47 kB | Adobe PDF |  View/Open |
| POSTER-ID 115-ISTDM2014-Strain Profile, Electronic band structure and Optical Gain of self-assembled Ge quantum dots on SiGe virtual substrate.pdf | Poster Presentation of the conference paper | 876.99 kB | Adobe PDF |  View/Open |
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