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Title: Band alignment between GaN and ZrO2 formed by atomic layer deposition
Authors: Ye, Gang
Wang, Hong
Arulkumaran, Subramaniam
Ng, Geok Ing
Li, Yang
Liu, Zhi Hong
Ang, Kian Siong
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Ye, G., Wang, H., Arulkumaran, S., Ng, G. I., Li, Y., Liu, Z. H., et al. (2014). Band alignment between GaN and ZrO2 formed by atomic layer deposition. Applied Physics Letters, 105(2), 022106-.
Series/Report no.: Applied physics letters
Abstract: The band alignment between Ga-face GaN and atomic-layer-deposited ZrO2 was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO2 layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE V of 1 ± 0.2 eV and conduction band discontinuity ΔE C of 1.2 ± 0.2 eV at ZrO2/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO2 layer into account.
ISSN: 0003-6951
DOI: 10.1063/1.4890470
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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