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https://hdl.handle.net/10356/105209| Title: | Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors | Authors: | Ng, C. W. Wang, H. |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Ng, C. W., & Wang, H. (2012). Characterization of conduction band edge discontinuity for InAlAs/GaAsSb using InP/GaAsSb heterojunction bipolar transistors. physica status solidi (a), 209(8), 1579-1582. | Series/Report no.: | physica status solidi (a) | Abstract: | In this work, the temperature-dependent DC performance of InP/GaAsSb double heterojunction bipolar transistors (DHBTs) with an InP/InAlAs composite emitter was characterized. The current transport mechanisms in DHBTs with a type-I InAlAs/GaAsSb emitter–base junction interface and a type-II GaAsSb/InP base–collector were studied. The experimental results reveal that electron injection at emitter–base junction could be affected by conduction barrier limited carrier transport. A conduction band edge discontinuity of 9.5 meV for InAlAs/GaAsSb heterojunction was experimentally estimated. | URI: | https://hdl.handle.net/10356/105209 http://hdl.handle.net/10220/17071 |
ISSN: | 1862-6300 | DOI: | 10.1002/pssa.201127699 | Schools: | School of Electrical and Electronic Engineering | Research Centres: | Research Techno Plaza | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
| Appears in Collections: | EEE Journal Articles |
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