Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105229
Title: InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy
Authors: Fitzgerald, Eugene A.
Liang, Y. Y.
Ngo, C. Y.
Yoon, Soon Fatt
Loke, Wan Khai
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2011
Source: Liang, Y. Y., Yoon, S. F., Ngo, C. Y., Loke, W. K., & Fitzgerald, E. A. (2011). InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy. Physica status solidi (c), 9(2), 214-217.
Series/Report no.: Physica status solidi (c)
Abstract: InAs/GaAs quantum dots (QDs) on GeOI were grown at various growth temperatures and in-depth photoluminescence study was conducted to characterize the optical properties of QDs on GeOI. InAs QDs with room temperature emission of 1.26 μm and areal density of 4.8 × 1010 cm-2 were obtained. It was shown that high QD growth temperature helps to promote uniform dot size distribution but In-Ga intermixing may lead to excessive thermal escape of carriers. Photoluminescence studies suggest that QDs on GeOI have good optical quality but with small amount of defects, acting as non-radiative recombination centers.
URI: https://hdl.handle.net/10356/105229
http://hdl.handle.net/10220/17644
DOI: 10.1002/pssc.201100261
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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