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|Title:||InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy||Authors:||Fitzgerald, Eugene A.
Liang, Y. Y.
Ngo, C. Y.
Yoon, Soon Fatt
Loke, Wan Khai
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2011||Source:||Liang, Y. Y., Yoon, S. F., Ngo, C. Y., Loke, W. K., & Fitzgerald, E. A. (2011). InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy. Physica status solidi (c), 9(2), 214-217.||Series/Report no.:||Physica status solidi (c)||Abstract:||InAs/GaAs quantum dots (QDs) on GeOI were grown at various growth temperatures and in-depth photoluminescence study was conducted to characterize the optical properties of QDs on GeOI. InAs QDs with room temperature emission of 1.26 μm and areal density of 4.8 × 1010 cm-2 were obtained. It was shown that high QD growth temperature helps to promote uniform dot size distribution but In-Ga intermixing may lead to excessive thermal escape of carriers. Photoluminescence studies suggest that QDs on GeOI have good optical quality but with small amount of defects, acting as non-radiative recombination centers.||URI:||https://hdl.handle.net/10356/105229
|DOI:||10.1002/pssc.201100261||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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