Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105229
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dc.contributor.authorFitzgerald, Eugene A.en
dc.contributor.authorLiang, Y. Y.en
dc.contributor.authorNgo, C. Y.en
dc.contributor.authorYoon, Soon Fatten
dc.contributor.authorLoke, Wan Khaien
dc.date.accessioned2013-11-15T02:04:13Zen
dc.date.accessioned2019-12-06T21:47:44Z-
dc.date.available2013-11-15T02:04:13Zen
dc.date.available2019-12-06T21:47:44Z-
dc.date.copyright2011en
dc.date.issued2011en
dc.identifier.citationLiang, Y. Y., Yoon, S. F., Ngo, C. Y., Loke, W. K., & Fitzgerald, E. A. (2011). InAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxy. Physica status solidi (c), 9(2), 214-217.en
dc.identifier.urihttps://hdl.handle.net/10356/105229-
dc.identifier.urihttp://hdl.handle.net/10220/17644en
dc.description.abstractInAs/GaAs quantum dots (QDs) on GeOI were grown at various growth temperatures and in-depth photoluminescence study was conducted to characterize the optical properties of QDs on GeOI. InAs QDs with room temperature emission of 1.26 μm and areal density of 4.8 × 1010 cm-2 were obtained. It was shown that high QD growth temperature helps to promote uniform dot size distribution but In-Ga intermixing may lead to excessive thermal escape of carriers. Photoluminescence studies suggest that QDs on GeOI have good optical quality but with small amount of defects, acting as non-radiative recombination centers.en
dc.language.isoenen
dc.relation.ispartofseriesPhysica status solidi (c)en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleInAs/GaAs quantum dots on germanium-on-insulator-on-silicon substrates (GeOI) using molecular beam epitaxyen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.researchSingapore-MIT Alliance Programmeen
dc.identifier.doi10.1002/pssc.201100261en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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