Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/105231
Title: Continuously tunable emission in inverted Type-I CdS/CdSe core/crown semiconductor nanoplatelets
Authors: Delikanli, Savas
Guzelturk, Burak
Hernandez-Martinez, Pedro Ludwig
Erdem, Talha
Kelestemur, Yusuf
Olutas, Murat
Akgul, Mehmet Zafer
Demir, Hilmi Volkan
Keywords: DRNTU::Engineering::Materials::Functional materials
Issue Date: 2015
Source: Delikanli, S., Guzelturk, B., Hernández-Martínez, P. L., Erdem, T., Kelestemur, Y., Olutas, M., et al. (2015). Continuously Tunable Emission in Inverted Type-I CdS/CdSe Core/Crown Semiconductor Nanoplatelets. Advanced Functional Materials, 25(27), 4282-4289.
Series/Report no.: Advanced Functional Materials
Abstract: The synthesis and unique tunable optical properties of core/crown nanoplatelets having an inverted Type-I heterostructure are presented. Here, colloidal 2D CdS/CdSe heteronanoplatelets are grown with thickness of four monolayers using seed-mediated method. In this work, it is shown that the emission peak of the resulting CdS/CdSe heteronanoplatelets can be continuously spectrally tuned between the peak emission wavelengths of the core only CdS nanoplatelets (421 nm) and CdSe nanoplatelets (515 nm) having the same vertical thickness. In these inverted Type-I nanoplatelets, the unique continuous tunable emission is enabled by adjusting the lateral width of the CdSe crown, having a narrower bandgap, around the core CdS nanoplatelet, having a wider bandgap, as a result of the controlled lateral quantum confinement in the crown region additional to the pure vertical confinement. As a proof-of-concept demonstration, a white light generation is shown by using color conversion with these CdS/CdSe heteronanoplatelets having finely tuned thin crowns, resulting in a color rendering index of 80. The robust control of the electronic structure in such inverted Type-I heteronanoplatelets achieved by tailoring the lateral extent of the crown coating around the core template presents a new enabling pathway for bandgap engineering in solution-processed quantum wells.
URI: https://hdl.handle.net/10356/105231
http://hdl.handle.net/10220/25966
ISSN: 1616-301X
DOI: 10.1002/adfm.201500403
Rights: © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
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