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Title: Property study of aluminium oxide thin films by thermal annealing
Authors: Zhao, Zhiwei
Tay, Beng Kang
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2011
Source: Zhao, Z., & Tay, B. K. (2012). Property study of aluminium oxide thin films by thermal annealing. physica status solidi (c), 9(1), 77-80.
Series/Report no.: physica status solidi (c)
Abstract: Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surfaces of aluminium oxide thin films remained smooth up to 600 °C. Crystallization is induced for the film annealed at 900 °C. It was also found that refractive index of the films increased with increasing the annealing temperature. Strong frequency dispersion of refractive index was found and fitted to a single oscillator model. The dispersion parameters, such as single oscillator energy, dispersion energy, average oscillator strength and its related wavelength, were estimated.
ISSN: 1862-6351
DOI: 10.1002/pssc.201084181
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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