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https://hdl.handle.net/10356/105232
Title: | Property study of aluminium oxide thin films by thermal annealing | Authors: | Zhao, Zhiwei Tay, Beng Kang |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2011 | Source: | Zhao, Z., & Tay, B. K. (2012). Property study of aluminium oxide thin films by thermal annealing. physica status solidi (c), 9(1), 77-80. | Series/Report no.: | physica status solidi (c) | Abstract: | Aluminium oxide thin films had been prepared by off-plane filtered cathodic vacuum arc (FCVA) under the oxygen partial pressure of 5 × 10-4 Torr at room temperature. Annealing effects on the properties of the films between 200 °C and 900 °C were investigated. Experiments results showed that the surfaces of aluminium oxide thin films remained smooth up to 600 °C. Crystallization is induced for the film annealed at 900 °C. It was also found that refractive index of the films increased with increasing the annealing temperature. Strong frequency dispersion of refractive index was found and fitted to a single oscillator model. The dispersion parameters, such as single oscillator energy, dispersion energy, average oscillator strength and its related wavelength, were estimated. | URI: | https://hdl.handle.net/10356/105232 http://hdl.handle.net/10220/16801 |
ISSN: | 1862-6351 | DOI: | 10.1002/pssc.201084181 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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