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dc.contributor.authorBadica, Petreen
dc.contributor.authorGrasso, Salvatoreen
dc.contributor.authorBorodianska, Hannaen
dc.contributor.authorXie, Sky Shumaoen
dc.contributor.authorLi, Peifengen
dc.contributor.authorTatarko, Peteren
dc.contributor.authorReece, Mike J.en
dc.contributor.authorSakka, Yoshioen
dc.contributor.authorVasylkiv, Olegen
dc.identifier.citationBadica, P., Grasso, S., Borodianska, H., Xie, S. S., Li, P., Tatarko, P., et al. (2014). Tough and dense boron carbide obtained by high-pressure (300 MPa) and low-temperature (1600^|^deg;C) spark plasma sintering. Journal of the Ceramic Society of Japan, 122(1424), 271-275.en
dc.description.abstractDense boron carbide (above 95%) was achieved through high pressure (300 MPa) and low temperature (1600°C) Spark Plasma Sintering (SPS). This approach resulted in improvement of fracture toughness and of dynamic toughness when compared to corresponding toughness values of the sample sintered by conventional SPS (2100°C, 50 MPa). Dynamic toughness was extracted from Split Hopkinson Pressure Bar measurements. Results are understood based on microstructure and on very different behaviour of the samples in respect to residual B2O3 and carbon available in the raw B4C powder.en
dc.relation.ispartofseriesJournal of the ceramic society of Japanen
dc.rights© 2014 The Ceramic Society of Japan. This paper was published in Journal of the Ceramic Society of Japan and is made available as an electronic reprint (preprint) with permission of The Ceramic Society of Japan. The paper can be found at the following official DOI:  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Materials::Ceramic materialsen
dc.titleTough and dense boron carbide obtained by high-pressure (300 MPa) and low-temperature (1600°C) spark plasma sinteringen
dc.typeJournal Articleen
dc.contributor.researchTemasek Laboratoriesen
dc.description.versionPublished versionen
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